Experimental evidence of carrier leakage in InGaAsN quantum-well lasers
Identifieur interne : 00BF74 ( Main/Repository ); précédent : 00BF73; suivant : 00BF75Experimental evidence of carrier leakage in InGaAsN quantum-well lasers
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Abstract
Carrier leakage processes are shown experimentally as one of the factors contributing to the temperature sensitivity of InGaAsN quantum well lasers. The utilization of the direct barriers of GaAs0.85P0.15 instead of GaAs, surrounding the InGaAsN quantum-well (QW)-active region, leads to significant suppression of carrier leakage at elevated temperatures of 90-100°C. Threshold current densities of only 390 and 440 A/cm2 was achieved for InGaAsN QW lasers (Lcav=2000 μm) with GaAs0.85P0.15-direct barriers at temperature of 80 and 90°C, respectively. © 2003 American Institute of Physics.
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Mawst</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0370595</idno><date when="2003-09-15">2003-09-15</date><idno type="stanalyst">PASCAL 03-0370595 AIP</idno><idno type="RBID">Pascal:03-0370595</idno><idno type="wicri:Area/Main/Corpus">00CB68</idno><idno type="wicri:Area/Main/Repository">00BF74</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Quantum well lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8535B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Carrier leakage processes are shown experimentally as one of the factors contributing to the temperature sensitivity of InGaAsN quantum well lasers. The utilization of the direct barriers of GaAs<sub>0.85</sub>P<sub>0.15</sub> instead of GaAs, surrounding the InGaAsN quantum-well (QW)-active region, leads to significant suppression of carrier leakage at elevated temperatures of 90-100°C. Threshold current densities of only 390 and 440 A/cm2 was achieved for InGaAsN QW lasers (L<sub>cav</sub>=2000 μm) with GaAs<sub>0.85</sub>P<sub>0.15</sub>-direct barriers at temperature of 80 and 90°C, respectively. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Experimental evidence of carrier leakage in InGaAsN quantum-well lasers</s1></fA08><fA11 i1="01" i2="1"><s1>TANSU (Nelson)</s1></fA11><fA11 i1="02" i2="1"><s1>YEH (Jeng-Ya)</s1></fA11><fA11 i1="03" i2="1"><s1>MAWST (Luke J.)</s1></fA11><fA14 i1="01"><s1>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, Pennsylvania 18015</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>2112-2114</s1></fA20><fA21><s1>2003-09-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0370595</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Carrier leakage processes are shown experimentally as one of the factors contributing to the temperature sensitivity of InGaAsN quantum well lasers. The utilization of the direct barriers of GaAs<sub>0.85</sub>P<sub>0.15</sub> instead of GaAs, surrounding the InGaAsN quantum-well (QW)-active region, leads to significant suppression of carrier leakage at elevated temperatures of 90-100°C. Threshold current densities of only 390 and 440 A/cm2 was achieved for InGaAsN QW lasers (L<sub>cav</sub>=2000 μm) with GaAs<sub>0.85</sub>P<sub>0.15</sub>-direct barriers at temperature of 80 and 90°C, respectively. © 2003 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F18</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fN21><s1>258</s1></fN21><fN47 i1="01" i2="1"><s0>0336M000080</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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